Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day

Posted on November 1, 2019 by Design in Design Innovation | 0 Comments

Samsung Electronics, a world leader in advanced semiconductor technology, showcased advanced memory and system logic devices at its Tech Day 2019 event. Fueling the future of tech for 5G, AI, cloud, edge, IoT, and autonomous vehicles, Samsung highlighted new processor and memory device capabilities. The company unveiled the Exynos 990 premium mobile processor, the 5G-enabled Exynos Modem 5123 and announced mass production of its third generation 10nm-class 1z-nm DRAM.

“Samsung is focused on harnessing the most advanced semiconductor technologies to power innovation across key markets,” said JS Choi, president, Samsung Semiconductor. “From System LSI devices that are perfectly adapted for real-world 5G and AI, to advanced solid-state drives (SSDs) that handle mission-critical tasks and offload CPU workload, we are determined to deliver infrastructure capabilities that are built to enable every wave of innovation.”

New technology announcements include:

Exynos 990 and 5G Exynos Modem 5123: Delivers unprecedented AI-powered user experiences on-device with a dual-core neural processing unit (NPU) and enhanced digital signal processor (DSP) that can perform over ten-trillion operations per second. The Exynos 990 and 5G Exynos Modem 5123 harness the most advanced chipmaking technologies to-date with a 7-nanometer (nm) process using extreme ultraviolet (EUV) lithography.

Third-generation 10nm-class (1z-nm) DRAM: Delivers the industry’s highest performance, energy efficiency and capacity, since mass production in September. Optimized for premium server platform development, the 1z-nm DRAM will open the door to a lineup of memory solutions at the cutting-edge such as DDR5, LPDDR5, HBM2E and GDDR6 products as early as the beginning of next year.

12GB LPDDR4X uMCP (UFS-based multichip package): Combines four 24Gb LPDDR4X chips and an ultra-fast eUFS 3.0 NAND storage into a single package, breaking through the current 8GB package limit in mid-range smartphones and bringing more than 10GB of memory to the broader smartphone market.

Samsung also proposed new business possibilities for next-generation memory technologies, including the company’s 7th-generation V-NAND with nearly 200 (1yy) cell layers for mobile and other premium memory solutions, and next-generation PCIe Gen5 SSDs for future server and storage applications.

Samsung’s third annual Tech Day hosted Silicon Valley’s leading companies, featured customer collaborations on GPU, PCIe Gen4 and HBM2e technologies, an industry-leading customer panel, and a demo pavilion showcasing the future of home automation, data centers, mobile/5G, and automotive technology.

“The proliferation of technological advances in 5G, edge computing and AI is changing the world at an exponential pace. The impact of AI will be everywhere, from new avenues for communication and unprecedented connections. AI’s impact will be seen everywhere. Self-driving cars will take to our roads and homes and businesses will become truly connected,” said Choi. “To enable such innovations, technology infrastructure must lead the way. Samsung is committed to being at the heart of all this innovation — and it will be fascinating to see what the world can do.”